Influence of gate-channel distance in low-noise InP HEMTs

被引：0
|
作者：
Nilsson, P. A. [1 ]
Rodilla, H. [1 ]
Schleeh, J. [1 ]
Wadefalk, N. [1 ]
Grahn, J. [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci MC2, S-41296 Gothenburg, Sweden
来源：
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年
关键词：
InP HEMT; LNA; noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 mu A/mm to 7 mu A/mm at -1 V gate bias.
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页数：2
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