Comparison of C-V measurement methods for RF-MEMS capacitive switches

被引：0

作者：

Wang, Jiahui ^{[1
]}

Salm, Cora ^{[1
]}

Schmitz, Jurriaan ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2013年

关键词：

RF-MEMS switch; capacitance; parasitics; measurement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S-11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

引用

页码：53 / 58

页数：6

共 12 条

[1]

[Anonymous], 2004, COMMUNICATIONS ENG

[2]

[Anonymous], PERFORMING VERY LOW

[3]

Bouchaud J., 2011, IHS ISUPPLI MEMS MAR, V4

[4] Modeling of dry stiction in micro electro-mechanical systems (MEMS) [J].

Hariri, A. ;

Zu, J. W. ;

Ben Mrad, R. .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (07) :1195-1206

[5]

Herfst R. W., 2012, COMMUNICATION

[6] RF Capacitance-Voltage characterization of MOSFETs with high leakage dielectrics [J].

Schmitz, J ;

Cubaynes, FN ;

Havens, RJ ;

de Kort, R ;

Scholten, AJ ;

Tiemeijer, LF .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (01) :37-39

[7] Dynamics and squeeze film gas damping of a capacitive RF MEMS switch [J].

Steeneken, PG ;

Rijks, TGSM ;

van Beek, JTM ;

Ulenaers, MJE ;

De Coster, J ;

Puers, R .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (01) :176-184

[8]

Suy H. M. R., 2008, P NAN MSM JUN 2008

[9]

Suy H. M. R., 2007, COMPACT SCALABLE CIR

[10] On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [J].

Tiggelman, M. P. J. ;

Reimann, K. ;

Van Rijs, F. ;

Schmitz, J. ;

Hueting, R. J. E. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (09) :2128-2136

← 1 2 →