Electrodeposition of Silicon Thin Films from Ionic Liquids

被引:8
作者
Martinez, A. M. [1 ]
Osen, K. S. [1 ]
Kongstein, O. E.
Sheridan, E. [1 ]
Ulyashin, A. [1 ]
Haarberg, G. M.
机构
[1] SINTEF Mat & Chem, Dept Energy Convers & Mat, N-7465 Trondheim, Norway
来源
SEMICONDUCTORS, METAL OXIDES, AND COMPOSITES: METALLIZATION AND ELECTRODEPOSITION OF THIN FILMS AND NANOSTRUCTURES | 2010年 / 25卷 / 27期
关键词
RAMAN-SPECTRA; AMORPHOUS SI; SEMICONDUCTORS; DEPOSITION; METALS;
D O I
10.1149/1.3318509
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The possibility of obtaining Si thin films by electrodeposition from the oxygen and water stable N-butyl-N-methyl-pyrrolidinium bis(trifluoromethyl-sulfonyl) amide ionic liquid at room temperature was investigated. The results obtained using SiCl4 and SiBr4 as precursors and aluminium and nickel as substrates were compared. Cyclic voltammetry, square wave voltammetry and chronoamperometry were used to characterize the electroreduction step of the silicon species. The results showed that the growth of the silicon layer is very slow, yielding only clusters of silicon at low cathodic potentials and short electrolysis times. At higher electrodeposition potentials and/or longer deposition times, the films became rougher and cracks appeared in the layers. This was mainly due to the accumulation of tensile strains during growth. The layers were very reactive to air and humidity, probably due to the high porosity of the film. In some cases, contamination of the layers by S and F was also observed.
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页码:107 / 118
页数:12
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