Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

被引：11

作者：

Bhatta, RP ^{[1
]}

Thoms, BD ^{[1
]}

Alevli, M ^{[1
]}

Woods, V ^{[1
]}

Dietz, N ^{[1
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2187513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1x1 hexagonal pattern demonstrating a well-ordered c-plane surface. High-resolution electron energy loss spectra exhibited a Fuchs-Kliewer surface phonon and modes assigned to a surface N-H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In-H species were observed, and since an N-H termination of the surface was observed, N-polarity indium nitride is indicated.

引用

页数：3

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