Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

被引：11
作者：
Bhatta, RP [1 ]
Thoms, BD [1 ]
Alevli, M [1 ]
Woods, V [1 ]
Dietz, N [1 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1063/1.2187513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1x1 hexagonal pattern demonstrating a well-ordered c-plane surface. High-resolution electron energy loss spectra exhibited a Fuchs-Kliewer surface phonon and modes assigned to a surface N-H species. Assignments were confirmed by observation of isotopic shifts following atomic deuterium cleaning. No In-H species were observed, and since an N-H termination of the surface was observed, N-polarity indium nitride is indicated.
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页数：3
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