Record Infrared Internal Quantum Efficiency in Silicon Heterojunction Solar Cells With Dielectric/Metal Rear Reflectors

被引:90
|
作者
Holman, Zachary C. [1 ]
Descoeudres, Antoine [2 ]
De Wolf, Stefaan [2 ]
Ballif, Christophe [2 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85069 USA
[2] Ecole Polytech Fed Lausanne, Inst Microengn, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2013年 / 3卷 / 04期
关键词
Heterojunction; light trapping; magnesium fluoride; parasitic absorption; reflector; silicon; solar cell; HYDROGEN-DOPED IN2O3; THIN-FILMS; LAYER; OXIDE; OPTIMIZATION; CONTACT; ZNO;
D O I
10.1109/JPHOTOV.2013.2276484
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Inserting a dielectric between the absorber and rear metal electrode of a solar cell increases rear internal reflectance by both limiting the transmission cone and suppressing the plasmonic absorption of light arriving outside of the cone. We fabricate rear reflectors with low-refractive-index magnesium fluoride (MgF2) as the dielectric, and with local electrical contacts through the MgF2 layer. These MgF2/metal reflectors are introduced into amorphous silicon/crystalline silicon heterojunction solar cells in place of the usual transparent conductive oxide/metal reflector. An MgF2/Ag reflector yields an average rear internal reflectance of greater than 99.5% and an infrared internal quantum efficiency that exceeds that of the world-record UNSW PERL cell. An MgF2/Al reflector performs nearly as well, enabling an efficiency of 21.3% and a short-circuit current density of nearly 38 mA/cm(2) in a silicon heterojunction solar cell without silver or indium tin oxide at the rear.
引用
收藏
页码:1243 / 1249
页数:7
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