Application of a micromachine scanning tunnelling microscope (mu-STM) for vacuum tunnelling gap observation

被引:4
作者
Lutwyche, MI
Wada, Y
机构
[1] Advanced Research Laboratory, Hitachi Ltd., Hatoyama
来源
JOURNAL OF ELECTRON MICROSCOPY | 1997年 / 46卷 / 02期
关键词
vacuum tunnelling gap; transmission electron microscope; micromachine scanning tunnelling microscope; ultra-large scale integrated circuit technology; micromachine; scanning tunnelling microscope;
D O I
10.1093/oxfordjournals.jmicro.a023503
中图分类号
TH742 [显微镜];
学科分类号
摘要
This paper reports the observation of the vacuum tunnelling gap between two conductors of a scanning tunnelling microscope (STM), using a high-resolution transmission electron microscope (TEM). A micromachine scanning tunnelling microscope (mu-STM) is made on a 2.5 mm(2) chip, by an advanced ultra-large scale integrated circuit (ULSI) technology with a minimum dimension of 0.4 mu m and alignment accuracy of 0.1 mu m. The mu-STM is designed to fit into a TEM sample holder for direct observation of the tip apex, and the results demonstrate the possibility of analysing the tunnelling gap physics and material transport mechanisms at the tip apex.
引用
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页码:161 / 164
页数:4
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