Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

被引：22

作者：

Irisawa, Toshifumi ^{[1
]}

Numata, Toshinori ^{[1
,5
]}

Toyoda, Eiji ^{[3
]}

Hirashita, Norio ^{[1
]}

Tezuka, Tsutomu ^{[1
]}

Sugiyama, Naoharu ^{[1
]}

Takagi, Shin-ichi ^{[2
,4
]}

机构：

[1] Assoc Super Adv Elect Technol ASET, MIRAI ASET, Kawasaki, Kanagawa 2128582, Japan

[2] Assoc Super Adv Elect Technol ASET, MIRAI AIST, Kawasaki, Kanagawa 2128582, Japan

[3] Covalent Mat Corp, Kanagawa 2578566, Japan

[4] Univ Tokyo, Dept Elect Engn, Sch Engn, Tokyo 1130033, Japan

[5] Toshiba Co Ltd, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Gate current; gate oxide reliability; MOSFET; negative bias temperature instability (NBTI); strained Si; time-dependent dielectric breakdown (TDDB);

D O I：

10.1109/TED.2008.2004649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically investigated the effects of strain on the gate oxide reliability, using biaxially strained Si MOSFETs, to elucidate their physical origins. It was found that the time-dependent dielectric breakdown reliability was significantly improved in strained Si nMOSFETs but was slightly degraded in strained Si pMOSFETs. These observations could be well explained by the strain-induced modulation of the gate current, resulting from band-structure modulation in the channels. It was also found that negative bias temperature instability was degraded in the strained Si pMOSFETs. This fact was attributable to the strain-induced enhancement of hole tunneling probability and hole wave. function penetration into Si-H bonding states near the MOS interface, which could enhance Si-H bond breaking.

引用

页码：3159 / 3166

页数：8

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