Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II-Transmission electron microscopy and atomic force microscopy

被引：16

作者：

Faleev, N. ^{[1
]}

Sustersic, N. ^{[2
]}

Bhargava, N. ^{[2
]}

Kolodzey, J. ^{[2
]}

Magonov, S. ^{[3
]}

Smith, D. J. ^{[4
]}

Honsberg, C. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Ira A Fulton Sch Engn, Solar Power Lab, Tempe, AZ 85287 USA

[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[3] NT MDT Dev Inc, Tempe, AZ 85284 USA

[4] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 365卷

关键词：

Characterization; Defects; Molecular beam epitaxy; Germanium silicon alloys; X-RAY-SCATTERING; DISLOCATION-STRUCTURE; STRAIN; GAN; RELAXATION; MORPHOLOGY; EVOLUTION;

D O I：

10.1016/j.jcrysgro.2012.11.067

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The creation of crystal defects during epitaxial growth, and their proper characterization and classification are among the most critical issues impacting epitaxial structures and device applications. Epitaxial layers of different SiGe composition grown by molecular beam epitaxy (MBE) on Si(001) and Ge(001) substrates have been studied by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). The volumetric and surface structure of crystal defects revealed and characterized by TEM and AFM provided a detailed understanding of the major processes associated with defect creation and structural transformation during epitaxial growth. The main structural features were identified and correlations were made between crystal perfection and epitaxial growth conditions as also revealed by X-ray diffraction. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：35 / 43

页数：9

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