A High-Power Broadband Passive Terahertz Frequency Doubler in CMOS

被引：45

作者：

Han, Ruonan ^{[1
]}

Afshari, Ehsan ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14850 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2013年 / 61卷 / 03期

基金：

美国国家科学基金会;

关键词：

CMOS; conversion efficiency; frequency doubler; passive; ring structure; signal source; terahertz; varactor; WAVE; OSCILLATORS; TECHNOLOGY; AMPLIFIERS; VARACTORS; CIRCUITS;

D O I：

10.1109/TMTT.2013.2243465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To realize a high-efficiency terahertz signal source, a varactor-based frequency-doubler topology is proposed. The structure is based on a compact partially coupled ring that simultaneously achieves isolation, matching, and harmonic filtering for both input and output signals at f(0) and 2f(0) The optimum varactor pumping/loading conditions for the highest conversion efficiency are also presented analytically along with intuitive circuit representations. Using the proposed circuit, a passive 480-GHz frequency doubler with a measured minimum conversion loss of 14.3 dB and an unsaturated output power of 0.23 mW is reported. Within 20-GHz range, the fluctuation of the measured output power is less than 1.5 dB, and the simulated 3-dB output bandwidth is 70 GHz (14.6%). The doubler is fabricated using 65-nm low-power bulk CMOS technology and consumes near zero dc power.

引用

页码：1150 / 1160

页数：11

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