Normally Off Single-Nanoribbon Al2O3/GaN MISFET

被引：66

作者：

Im, Ki-Sik ^{[1
]}

Kim, Ryun-Hwi ^{[1
]}

Kim, Ki-Won ^{[1
]}

Kim, Dong-Seok ^{[1
]}

Lee, Chun Sung ^{[2
]}

Cristoloveanu, Sorin ^{[3
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702201, South Korea

[2] Korea Telecommun Component Co Ltd, Anyang 430817, South Korea

[3] Inst Natl Polytech Grenoble, Inst Microelect Electromagnetism & Photon, F-38016 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Fin-shaped field-effect transistor (FinFET); GaN; metal-insulator-semiconductor field-effect transistor (MISFET); nanoribbon; normally off; triple gate; PERFORMANCE;

D O I：

10.1109/LED.2012.2222861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-nanoribbon Al2O3/GaN metal-insulator-semiconductor field-effect transistor (MISFET) has been fabricated. The fabricated device exhibits normally off operation with a threshold voltage of 2.1 V. The device also exhibits superior performances such as a maximum drain current density of 1.51 A/mm, a maximum transconductance of 580 mS/mm, and a field-effect mobility of 293 cm(2) . V-1 . s(-1). This is because the electron concentration in the GaN channels can be increased due to the enhanced gate controllability, which, thus, effectively screens the field lines from the interface traps or the defects near the channels to improve the electron mobility in the channel. The nanoribbon Al2O3/GaN MISFET is a very promising candidate for high-performance normally off GaN FETs.

引用

页码：27 / 29

页数：3

共 15 条

[1] Top-down fabrication of AlGaN/GaN nanoribbons [J].

Azize, M. ;

Palacios, T. .

APPLIED PHYSICS LETTERS, 2011, 98 (04)

[2] High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons [J].

Azize, Mohamed ;

Hsu, Allen L. ;

Saadat, Omair I. ;

Smith, Matthew ;

Gao, Xiang ;

Guo, Shiping ;

Gradecak, Silvija ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) :1680-1682

[3] Interface state characterization of ALD-Al2O3/GaN and ALD-Al2O3/AlGaN/GaN structures [J].

Hori, Yujin ;

Mizue, Chihoko ;

Hashizume, Tamotsu .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6, 2012, 9 (06) :1356-1360

[4] Enhancement-mode n-channel GaN MOSFETs on p-and n-GaN/sapphire substrates [J].

Huang, W. ;

Khan, T. ;

Chow, T. P. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :796-798

[5] Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate [J].

Im, Ki-Sik ;

Ha, Jong-Bong ;

Kim, Ki-Won ;

Lee, Jong-Sub ;

Kim, Dong-Seok ;

Hahm, Sung-Ho ;

Lee, Jung-Hee .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) :192-194

[6] Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET [J].

Kim, Ki-Won ;

Jung, Sung-Dal ;

Kim, Dong-Seok ;

Kang, Hee-Sung ;

Im, Ki-Sik ;

Oh, Jae-Joon ;

Ha, Jong-Bong ;

Shin, Jai-Kwang ;

Lee, Jung-Hee .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) :1376-1378

[7] Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors [J].

Li, Yat ;

Xiang, Jie ;

Qian, Fang ;

Gradecak, Silvija ;

Wu, Yue ;

Yan, Hao ;

Blom, Douglas A. ;

Lieber, Charles M. .

NANO LETTERS, 2006, 6 (07) :1468-1473

[8] Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs [J].

Liu, Shenghou ;

Cai, Yong ;

Gu, Guodong ;

Wang, Jinyan ;

Zeng, Chunhong ;

Shi, Wenhua ;

Feng, Zhihong ;

Qin, Hua ;

Cheng, Zhiqun ;

Chen, Kevin J. ;

Zhang, Baoshun .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :354-356

[9] Tri-Gate Normally-Off GaN Power MISFET [J].

Lu, Bin ;

Matioli, Elison ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :360-362

[10] Nanowire Transistor Performance Limits and Applications [J].

Lu, Wei ;

Xie, Ping ;

Lieber, Charles M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :2859-2876

← 1 2 →