High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

被引：4

作者：

Veneklasen, LH ^{[1
]}

Kao, HM ^{[1
]}

Rishton, SA ^{[1
]}

Winter, S ^{[1
]}

Boegli, V ^{[1
]}

Newman, T ^{[1
]}

Bertuccelli, G ^{[1
]}

Howard, G ^{[1
]}

Le, P ^{[1
]}

Tan, Z ^{[1
]}

Lozes, R ^{[1
]}

机构：

[1] Etec Syst Inc, Appl Mat Co, Hayward, CA 94545 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

Approximation theory - Current density - Distance measurement - Electron beams - Scanning;

D O I：

10.1116/1.1414117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A raster-shaped beam writing strategy has been tested on a prototype 50 keV electron-beam lithography workstation. The test stand was constructed to prove the raster-shaped beam concept by exposing patterns at full throughput over small areas. Patterns are composed in a raster-scanned array of variably shaped flashes at 100 MHz flash rate, with 0.9 muA full beam current, and 2200 A/cm(2) current density using a thermal field emission source. Writing speed is independent of resist sensitivity and pattern complexity. By comparison, a typical variably shaped beam system with a LaB6 source would have a current density of 10-30 A/cm(2) and a flash rate of 2 - 10 MHz, depending on resist sensitivity and deflection settling time. (C) 2001 American Vacuum Society.

引用

页码：2455 / 2458

页数：4

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