High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

被引:4
|
作者
Veneklasen, LH [1 ]
Kao, HM [1 ]
Rishton, SA [1 ]
Winter, S [1 ]
Boegli, V [1 ]
Newman, T [1 ]
Bertuccelli, G [1 ]
Howard, G [1 ]
Le, P [1 ]
Tan, Z [1 ]
Lozes, R [1 ]
机构
[1] Etec Syst Inc, Appl Mat Co, Hayward, CA 94545 USA
来源
关键词
Approximation theory - Current density - Distance measurement - Electron beams - Scanning;
D O I
10.1116/1.1414117
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A raster-shaped beam writing strategy has been tested on a prototype 50 keV electron-beam lithography workstation. The test stand was constructed to prove the raster-shaped beam concept by exposing patterns at full throughput over small areas. Patterns are composed in a raster-scanned array of variably shaped flashes at 100 MHz flash rate, with 0.9 muA full beam current, and 2200 A/cm(2) current density using a thermal field emission source. Writing speed is independent of resist sensitivity and pattern complexity. By comparison, a typical variably shaped beam system with a LaB6 source would have a current density of 10-30 A/cm(2) and a flash rate of 2 - 10 MHz, depending on resist sensitivity and deflection settling time. (C) 2001 American Vacuum Society.
引用
收藏
页码:2455 / 2458
页数:4
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