Tunable Charge-Transport Properties of Ih-C80 Endohedral Metallofullerenes: Investigation of La2@C80, Sc3N@C80, and Sc3C2@C80

被引：28

作者：

Sato, Satoru ^{[2
]}

Seki, Shu ^{[1
]}

Luo, Guangfu ^{[3
]}

Suzuki, Mitsuaki ^{[2
]}

Lu, Jing ^{[4
,5
]}

Nagase, Shigeru ^{[3
]}

Akasaka, Takeshi ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Appl Chem, Suita, Osaka 5650871, Japan

[2] Univ Tsukuba, Life Sci Ctr, Tsukuba Adv Res Alliance, Tsukuba, Ibaraki 3058577, Japan

[3] Kyoto Univ, Fukui Ctr Fundamental Chem, Kyoto 6068103, Japan

[4] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[5] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 28期

基金：

日本学术振兴会; 中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-ELECTRON-MOBILITY; MICROWAVE CONDUCTIVITY; OPTICAL SPECTROSCOPY; FILMS; CRYSTAL; DENSITY; PORPHYRIN; MOLECULES; DYNAMICS;

D O I：

10.1021/ja303660g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of I-h-C-80 endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of I-h-C-80 EMFs La-2@C-80, Sc3N@C-80, and Sc3C2@C-80. The thin film of Sc3C2@C-80 exhibits a high electron mobility mu = 0.13 cm(2) V-1 s(-1) under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La-2@C-80 or Sc3N@C-80.

引用

页码：11681 / 11686

页数：6

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