Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap

被引：15

作者：

Chen, X. J. ^{[1
]}

Yu, T. J. ^{[1
]}

Lu, H. M. ^{[1
]}

Yuan, G. C. ^{[1
]}

Shen, B. ^{[1
]}

Zhang, G. Y. ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

基金：

中国国家自然科学基金;

关键词：

WURTZITE SEMICONDUCTORS;

D O I：

10.1063/1.4828667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using modified k.p perturbation method, the optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) are studied. It is found that change of wavefunction overlaps between conduction band and valance subbands of heavy hole, light hole, and crystal-field split off hole is different. Such difference leads to the overturn of polarization degree and modulates optical polarization properties as well width and strain vary. This prompts that changing wavefunction overlaps of electron and hole can lead to a way to modulate optical polarization properties of Al-rich AlGaN/AlN QWs, on no condition that valence band order changes. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 25 条

[1] Growth and photoluminescence studies of Al-rich AlN/AlxGa1-xN quantum wells [J].