Optical properties of epitaxial YAG: Yb films

被引:17
作者
Ubizskii, SB
Matkovskii, AO
Melnyk, SS
Syvorotka, IM
Müller, V
Peters, V
Petermann, K
Beyertt, A
Giesen, A
机构
[1] Lviv Polytech Natl Univ, Inst Telecommun Radioelect & Elect Engn, UA-79013 Lvov, Ukraine
[2] Univ Rzezsow, Inst Phys, PL-35310 Rzeszow, Poland
[3] Sci Res Co Carat, R&D Inst Mat, UA-79031 Lvov, Ukraine
[4] Univ Hamburg, Inst Laser Phys, D-20355 Hamburg, Germany
[5] Univ Stuttgart, Inst Strahlwerkzeuge, D-70569 Stuttgart, Germany
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 04期
关键词
D O I
10.1002/pssa.200306726
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This work deals with the investigation of the optical properties of epitaxial YAG:Yb films and their suitability as gain media for thin disk lasers. Epitaxial films of YAG:Yb were grown by the liquid phase epitaxy method in air on the (111)-oriented YAG substrates. The thickness of the grown layers was from 30 to 260 mum. The melt composition was varied to obtain the desired doping level from 10 to 15% and to optimize the optical properties. The best epitaxial films were colourless and had an Yb3+ luminescence lifetime of more than 950 mus, which is very close to the intrinsic lifetime of the Yb ions in the bulk YAG single crystals. These films were tested in a thin disk laser setup with 24 absorption passes of the 940 nm pumping beam. The maximum output power at 1.03 mum wavelength in CW operation reached more than 60 W and the optical efficiency was close to 30%.
引用
收藏
页码:791 / 797
页数:7
相关论文
共 23 条
[1]  
Dong J, 1999, J CRYST GROWTH, V203, P163, DOI 10.1016/S0022-0248(99)00074-3
[2]  
Erhard S, 1999, OSA TRENDS OPT PHOTO, V26, P38
[3]   Liquid phase epitaxy: A versatile technique for the development of miniature optical components in single crystal dielectric media [J].
Ferrand, B ;
Chambaz, B ;
Couchaud, M .
OPTICAL MATERIALS, 1999, 11 (2-3) :101-114
[4]   SCALABLE CONCEPT FOR DIODE-PUMPED HIGH-POWER SOLID-STATE LASERS [J].
GIESEN, A ;
HUGEL, H ;
VOSS, A ;
WITTIG, K ;
BRAUCH, U ;
OPOWER, H .
APPLIED PHYSICS B-LASERS AND OPTICS, 1994, 58 (05) :365-372
[5]   X-ray excited charge transfer luminescence of ytterbium-containing aluminium garnets [J].
Guerassimova, N ;
Garnier, N ;
Dujardin, C ;
Petrosyan, AG ;
Pedrini, C .
CHEMICAL PHYSICS LETTERS, 2001, 339 (3-4) :197-202
[6]   Preparation and spectroscopy of Yb2+-doped Y3Al5O12, YAlO3, and LiBaF3 [J].
Henke, M ;
Persson, J ;
Kück, S .
JOURNAL OF LUMINESCENCE, 2000, 87-9 :1049-1051
[7]  
KARSZEWSKI M, 1998, ADV SOLID STATE LASE, V19, P296
[8]  
KOVALYOVA NS, 1981, KVANTOVAYA ELEKTRON+, V8, P2433
[9]   THE ROLE OF IRON IONS IN YAG AND YAP [J].
KVAPIL, J ;
KVAPIL, J ;
KUBELKA, J ;
AUTRATA, R .
CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (01) :127-131
[10]  
Malinowski M, 2001, OPTO-ELECTRON REV, V9, P67