Properties of silicon integrated photonic lenses: bandwidth, chromatic aberration, and polarization dependence

被引:6
作者
Marques-Hueso, Jose [1 ,2 ]
Sanchis, Lorenzo [1 ]
Cluzel, Benoit [3 ]
De Fornel, Frederique [3 ]
Martinez-Pastor, Juan P. [1 ]
机构
[1] Univ Valencia, Inst Ciencias Mat, UMDO Unidad Asociada CSIC IMM, Valencia 46071, Spain
[2] Heriot Watt Univ, Insitute Photon & Quantum Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[3] Univ Bourgogne, Grp Opt Champ Proche 9, Lab Interdisciplinaire Carnot de Bourgogne, UMR CNRS 5209, F-21078 Dijon, France
关键词
nanophotonics; integrated optics devices; near-field microscopy; lens design; polarization-sensitive devices; planar waveguides; NEGATIVE REFRACTION; DESIGN; OPTIMIZATION; CRYSTALS; FABRICATION;
D O I
10.1117/1.OE.52.9.091710
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We analyze the properties of silicon integrated photonic lenses based on scattering optical elements. The devices have been inverse-designed by combining genetic algorithms and the multiple scattering theory. These lenses are able to focus an infrared plane wave front on a position freely determined during the design stage. The nanofabricated silicon integrated lenses have proved effective over a large range of wavelengths, measured to be of the order of 100 nm. The lenses show chromatic aberration, with a displacement of the position of the focus measured to be higher than 1.5 mu m when the wavelength varies from 1500 to 1600 nm. Moreover, we analyze the polarization of the focused beam thanks to a polarization-sensitive scanning near-field optical microscope. The measurements show that the lenses focus on a definite point only for the design's polarization. The properties of these lenses enable them to assume the function of a nanofocusing device in silicon-on-insulator integrated optics. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
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页数:7
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