Superior hydrogen storage and electrochemical properties of MgxNi100-x/Pd films at room temperature

被引：12
|
作者：
Liu, Tong [1 ]
Cao, Yurong [1 ]
Xin, Gongbiao [2 ]
Li, Xingguo [2 ]
机构：
[1] Beihang Univ, Key Lab Aerosp Mat & Performance, Minist Educ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, BNLMS, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China
来源：
DALTON TRANSACTIONS | 2013年 / 42卷 / 37期
关键词：
MG THIN-FILMS; PULSED-LASER DEPOSITION; SORPTION PROPERTIES; SWITCHABLE MIRRORS; METAL-HYDRIDES; MAGNESIUM; NI; KINETICS; ALLOYS; NANOCOMPOSITES;
D O I：
10.1039/c3dt51628h
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The MgxNi100-x films of 100 nm have been prepared by magnetron co-sputtering Mg and Ni targets, and a Pd layer of 10 nm was deposited on these films by magnetron sputtering a Pd target. Mg2Ni and MgNi2 are directly generated during the co-sputtering process in the Mg84Ni16/Pd and Mg48Ni52/Pd films. The hydrogen storage properties of the films under 0.1 MPa H-2 at 298 K were investigated. The hydrogenation of the Mg84Ni16/Pd film saturates within 45 s and exhibits the faster absorption kinetics compared with Mg94Ni6/Pd and Mg48Ni52/Pd films. The electrochemical properties of the MgxNi100-x/Pd films were investigated in 6 M KOH with a three-electrode cell. The Mg84Ni16/Pd film can be activated just at the first cycle. The maximum discharge capacity of the Mg84Ni16/Pd film is 482.7 mAh g(-1), the highest among these films.
引用
收藏
页码：13692 / 13697
页数：6
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