Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Presented here is proof-of-principle that a thin single crystal semiconductor film-when twist-wafer bonded to a bulk single crystal substrate (of the same material)-will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Angstrom film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their [110] directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(similar to 1% strain) were grown with thicknesses of 3000 Angstrom, thirty times the Matthews-Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. (C) 1997 American Institute of Physics.