Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ-X mixing of the confined electron states

被引：15

作者：

Belyakov, V. A. ^{[1
]}

Belov, A. I. ^{[1
]}

Mikhaylov, A. N. ^{[1
]}

Tetelbaum, D. I. ^{[1
]}

Burdov, V. A. ^{[1
]}

机构：

[1] Univ Nizhniy Novgorod, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 04期

关键词：

SI NANOCRYSTALS; PHOTOLUMINESCENCE; ABSORPTION; DONOR;

D O I：

10.1088/0953-8984/21/4/045803

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It has been shown that the central-cell potential of a phosphorus ion embedded in a silicon nanocrystal effectively mixes the electronic states of X- and Gamma-bands. Quantum confinement strengthens the Gamma-X mixing which, in turn, straightens the nanocrystal's band structure, and substantially intensifies interband radiative recombination.

引用

页数：5

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