The effect of the nucleation temperature on the variation of the microstructure of Cz silicon after two- and three-step anneals

被引：0
|
作者：
Kung, CY [1 ]
Tsuy, FC [1 ]
Lee, HM [1 ]
Lee, SC [1 ]
机构：
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
来源：
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON | 1999年 / 99卷 / 01期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Two-step and three-step anneals were applied systematically to a set of commercial Cz silicon wafers. The microdefects generated during the anneals were decorated with Wright etchant and investigated by optical microscopy. The types of microdefect generated were observed to vary with the time and temperature of the nucleation anneal. The observations provide very useful information relevant to the control of microdefects in Cz silicon to improve the gettering efficiency.
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页码：290 / 299
页数：10
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