Defect Assessment and Leakage Control in Atomic Layer Deposited Al2O3 and HfO2 Dielectrics

被引：0
作者：
Gonzalez, M. B. [1 ]
Rafi, J. M. [1 ]
Beldarrain, O. [1 ]
Zabala, M. [1 ]
Campabadal, F. [1 ]
机构：
[1] CSIC, Inst Microelect Barcelona, IMB CNM, Campus UAB, Bellaterra 08193, Spain
来源：
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) | 2013年
关键词：
Al2O3; HfO2; ALD; Charge trapping; Defect generation; CAPACITORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of preexisting electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
引用
收藏
页码：277 / 279
页数：3
相关论文
共 17 条
  • [1] Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant
    Bargallo Gonzalez, Mireia
    Marc Rafi, Joan
    Beldarrain, Oihane
    Zabala, Miguel
    Campabadal, Francesca
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (01):
  • [2] Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
    Bertaud, T.
    Walczyk, D.
    Walczyk, Ch.
    Kubotsch, S.
    Sowinska, M.
    Schroeder, T.
    Wenger, Ch.
    Vallee, C.
    Gonon, P.
    Mannequin, C.
    Jousseaume, V.
    Grampeix, H.
    [J]. THIN SOLID FILMS, 2012, 520 (14) : 4551 - 4555
  • [3] Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
    Cagli, C.
    Buckley, J.
    Jousseaume, V.
    Cabout, T.
    Salaun, A.
    Grampeix, H.
    Nodin, J. F.
    Feldis, H.
    Persico, A.
    Cluzel, J.
    Lorenzi, P.
    Massari, L.
    Rao, R.
    Irrera, F.
    Aussenac, F.
    Carabasse, C.
    Coue, M.
    Calka, P.
    Martinez, E.
    Perniola, L.
    Blaise, P.
    Fang, Z.
    Yu, Y. H.
    Ghibaudo, G.
    Deleruyelle, D.
    Bocquet, M.
    Mueller, C.
    Padovani, A.
    Pirrotta, O.
    Vandelli, L.
    Larcher, L.
    Reimbold, G.
    de Salvo, B.
    [J]. 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [4] Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates
    Campabadal, F.
    Rafi, J. M.
    Zabala, M.
    Beldarrain, O.
    Faigon, A.
    Castan, H.
    Gomez, A.
    Garcia, H.
    Duenas, S.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [5] Chun-Chen Y., 2007, APPL PHYS LETT, V91
  • [6] Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
    Dingemans, Gijs
    Kessels, Erwin
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (04):
  • [7] Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM
    Gerritsen, E
    Emonet, N
    Caillat, C
    Jourdan, N
    Piazza, M
    Fraboulet, D
    Boeck, B
    Berthelot, A
    Smith, S
    Mazoyer, P
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (11) : 1767 - 1775
  • [8] Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si
    Gomez, A.
    Castan, H.
    Garcia, H.
    Duenas, S.
    Bailon, L.
    Campabadal, F.
    Rafi, J. M.
    Zabala, M.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [9] Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
    Hwang, Yoontae
    Engel-Herbert, Roman
    Rudawski, Nicholas G.
    Stemmer, Susanne
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (10)
  • [10] High-speed graphene transistors with a self-aligned nanowire gate
    Liao, Lei
    Lin, Yung-Chen
    Bao, Mingqiang
    Cheng, Rui
    Bai, Jingwei
    Liu, Yuan
    Qu, Yongquan
    Wang, Kang L.
    Huang, Yu
    Duan, Xiangfeng
    [J]. NATURE, 2010, 467 (7313) : 305 - 308
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