Infrared absorption spectroscopy measurements of amorphous CNx films prepared in CH4/N2 r.f. discharge

被引:66
作者
Mutsukura, N [1 ]
Akita, K [1 ]
机构
[1] Tokyo Denki Univ, Fac Engn, Chiyoda Ku, Tokyo 101, Japan
关键词
amorphous materials; infrared spectroscopy; nitrides; plasma processing and deposition;
D O I
10.1016/S0040-6090(99)00237-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon nitride (CNx) films were prepared in CH4/N-2 r.f. plasma, and were examined by means of IR absorption spectroscopy. The IR absorption bands associated with N-H (3200-3500 cm(-1)), C-H (2800-3000 cm(-1)), C=N (2100-2250 cm(-1)), and N-H and/or C=N (1500-1800 cm(-1)) bonds, were observed. The IR absorption band at 2100-2250 cm(-1) region was examined in more detail, and accordingly it was confirmed that this band contained five absorption peaks at around 2105, 2160, 2190, 2215 and 2245 cm(-1), which could be assigned to nitrile (-C=N) (2215 and 2245 cm(-1)) and isonitrile (-N=C) (2105, 2160 and 2190 cm(-1)) structures, respectively. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:115 / 119
页数:5
相关论文
共 16 条
[1]  
AN HXH, 1988, SOLID STATE COMMUN, V65, P921
[2]  
[Anonymous], MODERN ANAL METHODS
[3]   ANALYTICAL ELECTRON-MICROSCOPY AND RAMAN-SPECTROSCOPY STUDIES OF CARBON NITRIDE THIN-FILMS [J].
CHEN, MY ;
LI, D ;
LIN, X ;
DRAVID, VP ;
CHUNG, YW ;
WONG, MS ;
SPROUL, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (03) :521-524
[4]   MECHANISMS OF POLYMER FILM DEPOSITION FROM RF DISCHARGES OF ACETYLENE, NITROGEN AND HELIUM MIXTURES [J].
DURRANT, SF ;
MARCAL, N ;
CASTRO, SG ;
VINHAS, RCG ;
DEMORAES, MAB ;
NICOLA, JH .
THIN SOLID FILMS, 1995, 259 (02) :139-145
[5]  
Dyer J R., 1965, APPL ABSORPTION SPEC
[6]   Preparation of Langmuir-Blodgett films containing a charge-transfer complex of alkylated dicyanoquinonediimine (DCNQI) and copper [J].
Ikegami, K ;
Nakamura, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A) :L550-L552
[7]   SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS [J].
KAUFMAN, JH ;
METIN, S ;
SAPERSTEIN, DD .
PHYSICAL REVIEW B, 1989, 39 (18) :13053-13060
[8]   Carbon nitride thin films deposited by the reactive ion beam sputtering technique [J].
Kobayashi, S ;
Nozaki, S ;
Morisaki, H ;
Fukui, S ;
Masaki, S .
THIN SOLID FILMS, 1996, 281 :289-293
[9]   GROWTH AND STRUCTURE OF C-N THIN-FILMS PREPARED BY RADIO-FREQUENCY REACTIVE SPUTTERING [J].
KUMAR, S ;
TANSLEY, TL .
SOLID STATE COMMUNICATIONS, 1993, 88 (10) :803-806
[10]   INFRARED-ABSORPTION AND NUCLEAR-MAGNETIC-RESONANCE STUDIES OF CARBON NITRIDE THIN-FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING [J].
LI, D ;
CHUNG, YW ;
YANG, ST ;
WONG, MS ;
ADIBI, F ;
SPROUL, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1470-1473