Frequency-Domain Model of Longitudinal Mode Interaction in Semiconductor Ring Lasers

被引:18
作者
Cai, Xinlun [1 ]
Ho, Ying-Lung Daniel [1 ]
Mezosi, Gabor [2 ]
Wang, Zhuoran [3 ]
Sorel, Marc [2 ]
Yu, Siyuan [1 ]
机构
[1] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
[3] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
关键词
Nonlinear optics; ring lasers; semiconductor device modeling; semiconductor lasers; NONLINEAR GAIN SUPPRESSION; UNIDIRECTIONAL BISTABILITY; INJECTION-LASERS; CW OPERATION; LOW-POWER; MEMORY;
D O I
10.1109/JQE.2012.2182759
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A general and comprehensive frequency-domain model of longitudinal mode interactions in semiconductor ring lasers (SRLs) is presented, including nonlinear terms related to third order nonlinear susceptibilities chi(3) and also linear terms due to back scattering between counter-propagating modes. The model can handle a large number of modes and complex third order nonlinear processes such as self-suppression, cross-suppression and four wave mixing occurring due to both interband and intraband effects. Every aspect of the lasing characteristics of SRLs, including lasing spectra, light-current curves and lasing direction hysteresis, can be reproduced by the model. To assess the performance and validity of the model, several miniaturized SRLs are designed, fabricated and tested. Stable unidirectional lasing in SRLs is also demonstrated by introducing asymmetric feedback from external facets. Good agreement between theoretical and experimental results is demonstrated.
引用
收藏
页码:406 / 418
页数:13
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