Frequency-Domain Model of Longitudinal Mode Interaction in Semiconductor Ring Lasers

被引：18

作者：

Cai, Xinlun ^{[1
]}

Ho, Ying-Lung Daniel ^{[1
]}

Mezosi, Gabor ^{[2
]}

Wang, Zhuoran ^{[3
]}

Sorel, Marc ^{[2
]}

Yu, Siyuan ^{[1
]}

机构：

[1] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England

[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[3] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 03期

关键词：

Nonlinear optics; ring lasers; semiconductor device modeling; semiconductor lasers; NONLINEAR GAIN SUPPRESSION; UNIDIRECTIONAL BISTABILITY; INJECTION-LASERS; CW OPERATION; LOW-POWER; MEMORY;

D O I：

10.1109/JQE.2012.2182759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general and comprehensive frequency-domain model of longitudinal mode interactions in semiconductor ring lasers (SRLs) is presented, including nonlinear terms related to third order nonlinear susceptibilities chi(3) and also linear terms due to back scattering between counter-propagating modes. The model can handle a large number of modes and complex third order nonlinear processes such as self-suppression, cross-suppression and four wave mixing occurring due to both interband and intraband effects. Every aspect of the lasing characteristics of SRLs, including lasing spectra, light-current curves and lasing direction hysteresis, can be reproduced by the model. To assess the performance and validity of the model, several miniaturized SRLs are designed, fabricated and tested. Stable unidirectional lasing in SRLs is also demonstrated by introducing asymmetric feedback from external facets. Good agreement between theoretical and experimental results is demonstrated.

引用

页码：406 / 418

页数：13

共 46 条

[1]

Agrawl G. P., 1986, LONG WAVELENGTH SEMI

[2] Numerical characterization of intensity and frequency fluctuations associated with mode hopping and single-mode jittering in semiconductor lasers [J].

Ahmed, M .

PHYSICA D-NONLINEAR PHENOMENA, 2003, 176 (3-4) :212-236

[3] EFFECTS OF NONLINEAR GAIN ON MODE-HOPPING IN SEMICONDUCTOR-LASER DIODES [J].

ALALUSI, MR ;

DARLING, RB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (07) :1181-1192

[4] Excitability in optical systems close to Z2-symmetry [J].

Beri, Stefano ;

Mashall, Lilia ;

Gelens, Lendert ;

Van der Sande, Guy ;

Mezosi, Gabor ;

Sorel, Marc ;

Danckaert, Jan ;

Verschaffelt, Guy .

PHYSICS LETTERS A, 2010, 374 (05) :739-743

[5] ANOMALOUS INTERACTION OF SPECTRAL MODES IN A SEMICONDUCTOR LASER [J].

BOGATOV, AP ;

ELISEEV, PG ;

SVERDLOV, BN .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :510-515

[6] Spatial beam switching and bistability in a diode ring laser [J].

Booth, MF ;

Schremer, A ;

Ballantyne, JM .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1095-1097

[7] Linear and nonlinear mode interactions in a semiconductor ring laser [J].

Born, C ;

Sorel, M ;

Yu, SY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (03) :261-271

[8]

Born C., 2006, THESIS U BRISTOL BRI

[9] Lasing Mode Hysteresis Characteristics in Semiconductor Ring Lasers [J].

Born, Chris ;

Yuan, Guohui ;

Wang, Zhuoran ;

Sorel, Marc ;

Yu, Siyuan .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (11-12) :1171-1179

[10] Nonlinear Gain in Semiconductor Ring Lasers [J].

Born, Chris ;

Yuan, Guohui ;

Wang, Zhuoran ;

Yu, Siyuan .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (11-12) :1055-1064

← 1 2 3 4 5 →