Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition

被引：9
作者：
Okimura, Kunio [1 ]
Mian, Md. Suruz [1 ]
机构：
[1] Tokai Univ, Sch Engn, Hiratsuka, Kanagawa 2591292, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2012年 / 30卷 / 05期
基金：
日本学术振兴会;
关键词：
VO2; FILMS; PHASE-TRANSITION; COIL;
D O I：
10.1116/1.4733995
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The authors achieved oriented growth of vanadium dioxide (VO2) films on CoCrTa metal template grown on an Si substrate. Low-temperature (similar to 250 degrees C) deposition of VO2 films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO2 and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal-insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO2 crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4733995]
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页数：7
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