Crystallinity improvement of hexagonal boron nitride films by molybdenum catalysts during microwave plasma chemical vapor deposition and post-annealing

被引：12
作者：
Liu, Fei
Yu, Jie
Bai, Xuedong [1 ]
机构：
[1] Harbin Inst Technol, Shenzhen Grad Sch, Dept Mat Sci, Shenzhen 518055, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 24期
基金：
美国国家科学基金会;
关键词：
Hexagonal boron nitride; Molybdenum catalysts; Chemical vapor deposition; Post-annealing; Photoluminescence; THIN-FILMS; BN FILMS; NANOTUBES; COMPOSITES; PRESSURE; LAYER; CVD;
D O I：
10.1016/j.apsusc.2012.06.108
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hexagonal boron nitride (hBN) is a promising deep ultraviolet light emitter. Here we report the catalytic growth of hBN films by microwave plasma chemical vapor deposition (MPCVD). The hBN films were first grown on Mo/Si substrate from a gas mixture of N-2, BF3, and H-2 and then annealed in nitrogen for 3 h at 900 degrees C. The Mo catalysts exhibit obvious catalyzing effects in improving the crystallinity of the hBN films during the growth and annealing processes. Well-crystallized hBN films with small Raman peak width of 9.3 cm(-1) and sharp photoluminescence emission peak at 293 nm were obtained. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：10191 / 10194
页数：4
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