Crystallinity improvement of hexagonal boron nitride films by molybdenum catalysts during microwave plasma chemical vapor deposition and post-annealing

被引：12

作者：

Liu, Fei

Yu, Jie

Bai, Xuedong ^{[1
]}

机构：

[1] Harbin Inst Technol, Shenzhen Grad Sch, Dept Mat Sci, Shenzhen 518055, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 24期

基金：

美国国家科学基金会;

关键词：

Hexagonal boron nitride; Molybdenum catalysts; Chemical vapor deposition; Post-annealing; Photoluminescence; THIN-FILMS; BN FILMS; NANOTUBES; COMPOSITES; PRESSURE; LAYER; CVD;

D O I：

10.1016/j.apsusc.2012.06.108

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hexagonal boron nitride (hBN) is a promising deep ultraviolet light emitter. Here we report the catalytic growth of hBN films by microwave plasma chemical vapor deposition (MPCVD). The hBN films were first grown on Mo/Si substrate from a gas mixture of N-2, BF3, and H-2 and then annealed in nitrogen for 3 h at 900 degrees C. The Mo catalysts exhibit obvious catalyzing effects in improving the crystallinity of the hBN films during the growth and annealing processes. Well-crystallized hBN films with small Raman peak width of 9.3 cm(-1) and sharp photoluminescence emission peak at 293 nm were obtained. (c) 2012 Elsevier B.V. All rights reserved.

引用

收藏

页码：10191 / 10194

页数：4

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