Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

被引：7
作者：
Song, D. Y.
Kuryatkov, V.
Basavaraj, M.
Rosenbladt, D.
Nikishin, S. A. [1 ]
Holtz, M.
Syrkin, A. L.
Usikov, A. S.
Ivantsov, V. A.
Dmitriev, V. A.
机构：
[1] Texas Tech Univ, Lubbock, TX 79409 USA
[2] TDI Inc, Silver Spring, MD 20904 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2201856
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report studies of the morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy. The layers have been grown on c-plane sapphire substrates and epitaxial GaN, Al0.7Ga0.3N, and AlN templates grown on sapphire. InN properties are found to depend on template type with improvement of crystal structure in the template substrate order AlN -> AlGaN -> GaN. X-ray studies reveal InN layers grown on template substrates to be relaxed with lattice constants a=3.542 angstrom and c=5.716 angstrom. The Raman spectra and optical gaps of the InN layers, vary with free-carrier concentration in agreement with previous studies. We obtain a value of 2.5 +/- 0.2 for the index of refraction of InN. (c) 2006 American Institute of Physics.
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