Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction

被引：36

作者：

Hernando, MM ^{[1
]}

Fernández, A

García, J

Lamar, DG

Rascón, M

机构：

[1] Univ Oviedo, Grp Elect Ind, Gijon 33204, Spain

[2] Alcatel Espana SA, Madrid 28045, Spain

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2006年 / 53卷 / 02期

关键词：

EN; 61000-3-2; regulations; power-factor correction; silicon carbide devices;

D O I：

10.1109/TIE.2006.870882

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.

引用

页码：705 / 707

页数：3

共 9 条

[1]

Coyaud M, 2001, IEEE IND APPLIC SOC, P370, DOI 10.1109/IAS.2001.955447

[2]

DIXON LH, 1988, P UN POW SUPPL SEM

[3]

ELASSER A, 1999, P IEEE IND APPL SOC, P341

[4] NOVEL ZERO-VOLTAGE-TRANSITION PWM CONVERTERS [J].

HUA, GC ;

LEU, CS ;

JIANG, YM ;

LEE, FCY .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 1994, 9 (02) :213-219

[5] AN AC-TO-DC CONVERTER WITH HIGH-QUALITY INPUT WAVEFORMS [J].

KOCHER, MJ ;

STEIGERWALD, RL .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1983, 19 (04) :586-599

[6]

Lorenz L, 2001, IEEE IND APPLIC SOC, P376, DOI 10.1109/IAS.2001.955448

[7]

NOON JP, 1996, U153 UN CORP

[8]

Spiazzi G, 2002, IEEE POWER ELECTRON, P631, DOI 10.1109/PSEC.2002.1022524

[9] Silicon carbide high-power devices [J].

Weitzel, CE ;

Palmour, JW ;

Carter, CH ;

Moore, K ;

Nordquist, KJ ;

Allen, S ;

Thero, C ;

Bhatnagar, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1732-1741

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