Numerical simulation of Cool MOS transistor.

被引：0

作者：

Langer, M ^{[1
]}

Lisik, Z ^{[1
]}

Podgórski, J ^{[1
]}

机构：

[1] Tech Univ Lodz, Inst Elect, PL-90924 Lodz, Poland

来源：

EXPERIENCE OF DESIGNING AND APPLICATION OF CAD SYSTEMS IN MICROELECTRONICS | 2001年

关键词：

numerical modelling and simulation; VDMOS; CoolMOS; semiconductor;

D O I：

10.1109/CADSM.2001.975849

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Although the new CoolMOS concept for high-voltage MOSFET is based on the conventional MOSFET principle, it is not a gradual enhancement or further optimization of the conventional power MOSFET, but a ground-breaking innovation in the MOS-controlled power transistor technology field. Due to its low on-resistance accompanying the high blocking voltage, the previously known technology limits for the standard MOSFET have been far exceeded. This opens the way to new fields of application.

引用

页码：303 / 304

页数：2