Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)

Dual spectral source assisted metalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of high dielectric constant materials. Tungsten halogen lamps and a deuterium lamp are used as the sources of optical and thermal energy. In this paper, we have reported the deposition and characterization of tantalum penta oxide films. Ta2O5 films were deposited at 660 degrees C for 15 min and annealed at 400 degrees C for 1 h. The leakage current densities of 10.6 Ma thick films are as low as 10(-10) A/cm(2) for gate voltage under 4V. To the best of our knowledge, these are the best results reported to date by any researcher. The high energy photons used in the in-situ cleaning and deposition process play an important role in obtaining high quality films of Ta2O5.