Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses

被引：27

作者：

Zhang, Cunbo ^{[1
]}

Wang, Honggang ^{[1
]}

Zhang, Jiande ^{[1
]}

Du, Guangxing ^{[1
]}

机构：

[1] Natl Univ Def Technol, Changsha 410073, Hunan, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2015年 / 57卷 / 05期

基金：

中国国家自然科学基金;

关键词：

GaAs PHEMT; injection experiment; microwave pulse; nonlinear and transient; temperature inside transistor; SUSCEPTIBILITY;

D O I：

10.1109/TEMC.2015.2410491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nonlinear and transient responses of gallium arsenide pseudomorphic high electron mobility transistor (GaAs PHEMT) injected with microwave pulses are studied in this paper. The experimental research results show that the feature of the output power of the GaAs PHEMT is from linear increase to saturation to linear increase again as the input power increases; and the feature of the measured output time domain waveforms is from linearity to saturation to reversion as the input power increases. The simulation model for analyzing the GaAs PHEMT with microwave pulses is established by TCAD. The nonlinear feature of GaAs PHEMT analyzed through simulation is consistent with measurement. In addition, the field, current density, and temperature distribution inside the transistor injected with microwave pulses are discussed.

引用

页码：1132 / 1138

页数：7

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