Development and characterization of ZnO thin film for piezoelectric applications

被引：8

作者：

Kumar, Ashish ^{[1
]}

Saini, Surendra Kumar ^{[2
]}

Sharma, Girraj ^{[1
]}

Johar, Arun Kishor ^{[3
]}

机构：

[1] Jaipur Engn Coll & Res Ctr, Dept Elect & Commun, Jaipur 302022, Rajasthan, India

[2] Jaipur Natl Univ, Dept Elect & Commun, Jaipur 302017, Rajasthan, India

[3] Malaviya Natl Inst Technol, Dept Elect & Commun, Jaipur 302017, Rajasthan, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2020年 / 32卷

关键词：

ZnO; Piezoelectric; XRD; AFM; SEM; FABRICATION;

D O I：

10.1016/j.matpr.2020.01.351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports a structural study of the ZnO thin film deposited on p-type silicon substrate using radio frequency (RF) sputtering technique. The structural study of the deposited ZnO thin film is done. The Xray diffraction (XRD) spectra shows a strong peak of (0 0 2) orientation which ensures high quality of piezoelectric film. The roughness of the ZnO film is measured and found to be 1.85 nm which attributed to lower acoustic loss during wave propagation. These sputtering parameters can be used to deposit good quality ZnO thin film which can be utilized as piezoelectric layer in acoustic sensors, pressure sensors and many other optoelectronics devices. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：261 / 263

页数：3

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