Formation of a Nanostructure of Films of Copper at the Low-Temperature Thermal Deposition

The process of copper-film nanostructure formation is investigated by the computer simulation method. The results show that the formation of nanoblocks in a bulk is provoked by the morphologic-instability development at the surface of a growing film. The time dependences of the film roughness are obtained. As revealed, the mechanism of condensation-microcracks' nucleation is involved by the fluctuation nucleation of zones containing a stacking fault, and their growth and subsequent formation of vacancy clusters are determined by the effect of incident-atom trajectory bending within the force field of surface atoms. The film-density changing with depth is studied. The conclusion is drawn about the transition, at the low-temperature deposition, from the stochastic growth to the stage of oriented growth of nanocrystals.