Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxide-semiconductor structures

被引：5

作者：

Bae, Sung-Bum ^{[1
]}

Kim, Ki-Won ^{[2
]}

Lee, Yong Soo ^{[2
]}

Lee, Jung-Hee ^{[2
]}

Bae, Youngho ^{[3
]}

Cristoloveanu, Sorin ^{[4
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305606, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

[3] Uiduk Univ, Dept Elect Engn, Gyeongju 780713, South Korea

[4] Minatec, Grenoble Polytech Inst, IMEP, Grenoble, France

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

基金：

新加坡国家研究基金会;

关键词：

GaN; C-V; TMAH; MOS; Al2O3; FIELD-EFFECT TRANSISTORS; N-TYPE GAN; ALGAN/GAN; PLASMA; DAMAGE;

D O I：

10.1016/j.mee.2013.03.108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of surface treatment on the interfacial properties between the Al2O3 gate dielectric and the recess-etched GaN surface of the AlGaN/GaN-based MOSFET has been characterized by capacitance-voltage (C-V) measurements. The recessed GaN surface was treated in the tetramethylammonium hydroxide (TMAH) solution at 85 degrees C for 10 min to smoothen the surface and remove the plasma damage. The surface treatment decreases the interface trap density by removing surface traps related to the native surface oxide such as GaxOy, which results in much improved C-V characteristics. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：10 / 12

页数：3

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