First principles studies of structural, electrical and magnetic properties of semiconductor nanowires

被引:2
作者
Galicka, Marta [1 ]
Buczko, Ryszard [1 ]
Kacman, Perla [1 ]
Lima, Erika N. [1 ,2 ]
Schmidt, Tome M. [2 ]
Shtrikman, Hadas [3 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG, Brazil
[3] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 10期
关键词
nanowires; crystal structure; doping; ab initio calculations; electrical properties; magnetic properties; MOLECULAR-BEAM EPITAXY; CORE-SHELL NANOWIRES; III-V; ZINC-BLENDE; ROOM-TEMPERATURE; STACKING-FAULTS; GAAS NANOWIRES; ELECTRONIC-STRUCTURE; QUANTUM CONFINEMENT; INAS NANOWIRES;
D O I
10.1002/pssr.201307234
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article reviews recent advances in theoretical description of the properties of various III-V and IV-VI nanowires, which have been obtained using simple ab initio methods. The impact of crystal structure, lateral surfaces, passivation of the dangling bonds and quantum confinement on the stability of the nanowires is discussed. The second part of the paper is devoted to the analysis of III-V and IV-VI nanowires doped with various, in particular magnetic, ions. The influence of the crystal structure of the wire on the segregation and formation energies of different dopants and thus on the electric and magnetic properties of the nanowires is shown. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码:739 / 753
页数:15
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