20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

被引：0

作者：

Klaime, K. ^{[1
]}

Piron, R. ^{[1
]}

Paranthoen, C. ^{[1
]}

Batte, T. ^{[1
]}

Grillot, F. ^{[1
]}

Dehaese, O. ^{[1
]}

Loualiche, S. ^{[1
]}

Le Corre, A. ^{[1
]}

Rosales, R. ^{[2
]}

Merghem, K. ^{[2
]}

Martinez, A. ^{[2
]}

Ramdane, A. ^{[2
]}

机构：

[1] UEB INSA RENNES, CNRS FOTON UMR6082, Rennes, France

[2] CNRS LPN, Marcoussis, France

来源：

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

Mode-locking; quantum dots (QDs); semiconductors laser;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.

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页码：181 / 184

页数：4

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