ASYMPTOTIC BEHAVIOR OF SOLUTIONS TO THE BIPOLAR HYDRODYNAMIC MODEL OF SEMICONDUCTORS IN BOUNDED DOMAIN

被引：26

作者：

Mei, Ming ^{[1
,2
]}

Rubino, Bruno ^{[3
]}

Sampalmieri, Rosella ^{[3
]}

机构：

[1] Champlain Coll St Lambert, Dept Math, Quebec City, PQ J4P 3P2, Canada

[2] McGill Univ, Dept Math & Stat, Montreal, PQ H3A 2K6, Canada

[3] Univ Aquila, Dept Pure & Appl Math, I-67010 Laquila, Italy

来源：

基金：

加拿大自然科学与工程研究理事会;

关键词：

Bipolar hydrodynamic model; semiconductor; nonlinear damping; stationary solutions; asymptotic behavior; convergence rates; LARGE TIME BEHAVIOR; STEADY-STATE SOLUTIONS; EULER-POISSON SYSTEM; STATIONARY WAVES; GLOBAL EXISTENCE; SMOOTH SOLUTIONS; CONVERGENCE; RELAXATION; STABILITY; LIMIT;

D O I：

10.3934/krm.2012.5.537

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this paper we present a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-flat doping profile. For such an Euler-Poisson system, we prove, by means of a technical energy method, that the solutions are unique, exist globally and asymptotically converge to the corresponding stationary solutions. An exponential decay rate is also derived. Moreover we allow that the two pressure functions can be different.

引用

页码：537 / 550

页数：14

共 38 条

[1] Global existence of smooth solutions of the N-dimensional Euler-Poisson model [J].

Alì, G .

SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 2003, 35 (02) :389-422

[2] Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors [J].

Alì, G ;

Bini, D ;

Rionero, S .

SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 2000, 32 (03) :572-587

[3] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[4] Particle hydrodynamic moment models in biology and microelectronics: singular relaxation limits [J].

Chen, GQ ;

Jerome, JW ;

Zhang, B .

NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 1997, 30 (01) :233-244

[5] Convergence of shock capturing schemes for the compressible Euler-Poisson equations [J].

Chen, GQ ;

Wang, D .

COMMUNICATIONS IN MATHEMATICAL PHYSICS, 1996, 179 (02) :333-364

[6]

DEGOND P., 1990, Appl. Math. Lett, V3, P25, DOI [DOI 10.1016/0893-9659(90)90130-4, 10.1016/0893-9659(90)90130-4]

[7] Steady-state solutions of a one-dimensional hydrodynamic model for semiconductors [J].

Fang, WF ;

Ito, K .

JOURNAL OF DIFFERENTIAL EQUATIONS, 1997, 133 (02) :224-244

[8]

GAMBA IM, 1992, COMMUN PART DIFF EQ, V17, P553

[9] Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors [J].

Gasser, I ;

Hsiao, L ;

Li, HL .

JOURNAL OF DIFFERENTIAL EQUATIONS, 2003, 192 (02) :326-359

[10] The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors [J].

Gasser, I ;

Natalini, R .

QUARTERLY OF APPLIED MATHEMATICS, 1999, 57 (02) :269-282

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