Gas-Solution Interface Technique as a simple method to produce inorganic microtubes with scroll morphology

被引:18
作者
Gulina, Larisa B. [1 ]
Tolstoy, Valeri P. [1 ]
Solovev, Alexander A. [2 ]
Gurenko, Vladislav E. [1 ]
Huang, Gaoshan [2 ]
Mei, Yongfeng [2 ]
机构
[1] St Petersburg State Univ, Dept Solid State Chem, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia
[2] Fudan Univ, Dept Mat Sci, 220 Handan Rd, Shanghai 200433, Peoples R China
基金
俄罗斯科学基金会;
关键词
Interface; Rolled-up microtubes; 2D nanocrystals; Inorganic machines; Nanomaterials; NEGATIVE THERMAL-EXPANSION; LIQUID DIFFUSION METHOD; GAS/LIQUID INTERFACE; FACILE FABRICATION; 2D NANOCRYSTALS; MANGANESE OXIDE; THIN-FILMS; LAF3; NANOPARTICLES; LAYERS;
D O I
10.1016/j.pnsc.2020.05.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the past decade, numerous studies have dealt with new properties of inorganic nanomaterials with improved characteristics due to a particular morphology, and new facile methods to produce such materials have been reported. Inorganic microtubes can be designed for multifunctional materials with highly specific surface area. These microtubes can act as individual on-chip components of miniature devices or off-chip micro-machines. The paper first discusses the main regularities of the reactions at the gas-solution interface and then goes on to present the basic principles of the Gas-Solution Interface Technique (GSIT), thus demonstrating a new way of facile synthesis of inorganic rolled-up microtubes. A distinctive feature of the technique is the formation of a gradient solid layer on the surface of the aqueous solution as a result of the gaseous and liquid reagents interaction. When dried in the air, this thin layer is capable of self-folding into microtubes with specific morphology. The paper considers the specific features of microtubes obtained by GSIT from numerous classes of inorganic compounds, including oxides, hydroxides, sulfides, fluorides. Further areas of possible practical applications of GSIT microtubes are discussed. The prospects of future development of the GSIT are outlined.
引用
收藏
页码:279 / 288
页数:10
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