Realization of band-gap engineering of ZnO thin films via Ca alloying

被引：24
作者：
Cao, Ling [1 ,2 ]
Jiang, Jie [3 ]
Zhu, Liping [3 ]
机构：
[1] Taiyuan Univ Technol, Key Lab Adv Transducers & Intelligent Control Sys, Minist Educ, Taiyuan 030024, Peoples R China
[2] Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
MATERIALS LETTERS | 2013年 / 100卷
关键词：
Semiconductors; Pulsed laser deposition; Thin film; ZnO;
D O I：
10.1016/j.matlet.2013.03.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on Zn1-xCaxO ternary alloy thin films prepared on quartz substrates by pulsed laser deposition. The effects of different Ca contents on the structural and optical properties of the films are investigated in detail. The results indicate that the Ca content in the Zn1-xCaxO alloy thin films should not be more than 22.4 at% in the present study to keep the hexagonal wurtzite structure of ZnO. A 16.2% broadening in the optical band-gap of ZnO thin films has been realized by using Ca alloying. The optical band-gap has been extended to 3.81 eV for the film containing 22.4 at% Ca. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：201 / 203
页数：3
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