Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates

被引：92

作者：

Kwon, Soon-Shin ^{[1
]}

Hong, Woong-Ki ^{[1
]}

Jo, Gunho ^{[1
]}

Maeng, Jongsun ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Song, Sunghoon ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 23期

关键词：

D O I：

10.1002/adma.200800691

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Inorganic field-effect transistors are fabricated using ZnO and In2O3 nanowires on flexible plastic substrates and their electronic characteristics are measured under different bending conditions. The electrical properties of bent nanowire flexible transistors can be understood by the piezoelectric effect and the electron trapping at the interfaces between the nanowire and the polymer dielectric.

引用

页码：4557 / 4562

页数：6

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