MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

被引：75

作者：

Gupta, Priti ^{[1
]}

Rahman, A. A. ^{[1
]}

Hatui, Nirupam ^{[1
]}

Gokhale, M. R. ^{[1
]}

Deshmukh, Mandar M. ^{[1
]}

Bhattacharya, Arnab ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 372卷

关键词：

Low pressure metalorganic vapor phase epitaxy; Graphene; Nitrides; Semiconducting III-V materials; LIGHT-EMITTING-DIODES; GAN; GRAPHITE; LAYERS;

D O I：

10.1016/j.jcrysgro.2013.03.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an AlN nucleation and a buffer layer. We investigate the effect of varying growth temperature and V/III ratio and show that under optimized growth conditions preferentially semipolar (10 (1) over bar1) oriented nitride layers can be obtained. These layers, though polycrystalline, are highly oriented and show strong room temperature photoluminescence, thus showing graphene to be a novel substrate for the growth of III-nitride materials. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：105 / 108

页数：4

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