MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

被引：75

作者：

Gupta, Priti ^{[1
]}

Rahman, A. A. ^{[1
]}

Hatui, Nirupam ^{[1
]}

Gokhale, M. R. ^{[1
]}

Deshmukh, Mandar M. ^{[1
]}

Bhattacharya, Arnab ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 372卷

关键词：

Low pressure metalorganic vapor phase epitaxy; Graphene; Nitrides; Semiconducting III-V materials; LIGHT-EMITTING-DIODES; GAN; GRAPHITE; LAYERS;

D O I：

10.1016/j.jcrysgro.2013.03.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an AlN nucleation and a buffer layer. We investigate the effect of varying growth temperature and V/III ratio and show that under optimized growth conditions preferentially semipolar (10 (1) over bar1) oriented nitride layers can be obtained. These layers, though polycrystalline, are highly oriented and show strong room temperature photoluminescence, thus showing graphene to be a novel substrate for the growth of III-nitride materials. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：105 / 108

页数：4

共 20 条

[1] Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J].

Arif, Ronald A. ;

Ee, Yik-Khoon ;

Tansu, Nelson .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[2] Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates [J].

Choi, Jun Hee ;

Zoulkarneev, Andrei ;

Kim, Sun Il ;

Baik, Chan Wook ;

Yang, Min Ho ;

Park, Sung Soo ;

Suh, Hwansoo ;

Kim, Un Jeong ;

Bin Son, Hyung ;

Lee, Jae Soong ;

Kim, Miyoung ;

Kim, Jong Min ;

Kim, Kinam .

NATURE PHOTONICS, 2011, 5 (12) :763-769

[3] High-quality GaN films grown on chemical vapor-deposited graphene films [J].

Chung, Kunook ;

Park, Suk In ;

Baek, Hyeonjun ;

Chung, Jin-Seok ;

Yi, Gyu-Chul .

NPG ASIA MATERIALS, 2012, 4 :e24-e24

[4] Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices [J].

Chung, Kunook ;

Lee, Chul-Ho ;

Yi, Gyu-Chul .

SCIENCE, 2010, 330 (6004) :655-657

[5] Improving GaN-on-silicon properties for GaN device epitaxy [J].

Dadgar, A. ;

Hempel, T. ;

Blaesing, J. ;

Schulz, O. ;

Fritze, S. ;

Christen, J. ;

Krost, A. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05) :1503-1508

[6] Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices [J].

Farrell, R. M. ;

Young, E. C. ;

Wu, F. ;

DenBaars, S. P. ;

Speck, J. S. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (02)

[7] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[8] Computational study for growth of GaN on graphite as 3D growth on 2D material [J].

Ishii, Akira ;

Tatani, Takaaki ;

Asano, Hiroki ;

Nakada, Kengo .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2, 2010, 7 (02) :347-350

[9] Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes [J].

Jo, Gunho ;

Choe, Minhyeok ;

Cho, Chu-Young ;

Kim, Jin Ho ;

Park, Woojin ;

Lee, Sangchul ;

Hong, Woong-Ki ;

Kim, Tae-Wook ;

Park, Seong-Ju ;

Hong, Byung Hee ;

Kahng, Yung Ho ;

Lee, Takhee .

NANOTECHNOLOGY, 2010, 21 (17)

[10] Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor [J].

Kadir, Abdul ;

Ganguli, Tapas ;

Gokhale, M. R. ;

Shah, A. P. ;

Chandvankar, S. S. ;

Arora, B. M. ;

Bhattacharya, Arnab .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :403-408

← 1 2 →