Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature

被引：23

作者：

Dekkers, JM ^{[1
]}

Rijnders, G ^{[1
]}

Blank, DHA ^{[1
]}

机构：

[1] Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2195096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (> 85%) and low resistivity (rho=4.1x10(-4) Omega cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.

引用

页数：3

共 12 条

[1] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[2]

DEKKERS JM, UNPUB

[3] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].

FRANK, G ;

KOSTLIN, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206

[4] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[5] Pulsed laser deposition of high quality ITO thin films [J].

Hanus, F ;

Jadin, A ;

Laude, LD .

APPLIED SURFACE SCIENCE, 1996, 96-8 :807-810

[6] Electrical and optical properties of indium tin oxide thin films grown by pulsed laser deposition [J].

Kim, H ;

Horwitz, JS ;

Piqué, A ;

Gilmore, CM ;

Chrisey, DB .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S447-S450

[7] Electrical and optical characteristics of ITO films by pulsed laser deposition using a 10 wt.% SnO2-doped In2O3 ceramic target [J].

Kim, SH ;

Park, NM ;

Kim, TY ;

Sung, GY .

THIN SOLID FILMS, 2005, 475 (1-2) :262-266

[8] Electron scattering mechanisms in indium-tin-oxide thin films: grain boundary and ionized impurity scattering [J].

Lee, HC ;

Park, OO .

VACUUM, 2004, 75 (03) :275-282

[9] Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature [J].

Morales-Paliza, MA ;

Huang, MB ;

Feldman, LC .

THIN SOLID FILMS, 2003, 429 (1-2) :220-224

[10] Mechanisms of oxygen incorporation in indium-tin-oxide films deposited by laser ablation at room temperature [J].

Morales-Paliza, MA ;

Haglund, RF ;

Feldman, LC .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3757-3759

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