Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation

被引:10
作者
Gunji, M. [1 ]
Thombare, S. V.
Hu, S.
McIntyre, P. C.
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
GROWTH; GEO2; SILICON; ARRAYS; SI;
D O I
10.1088/0957-4484/23/38/385603
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on the directed synthesis of germanium oxide (GeOx) nanowires (NWs) by locally catalyzed thermal oxidation of aligned arrays of gold catalyst-tipped germanium NWs. During oxygen anneals conducted above the Au-Ge binary eutectic temperature (T > 361 degrees C), one-dimensional oxidation of as-grown Ge NWs occurs by diffusion of Ge through the Au-Ge catalyst droplet, in the presence of an oxygen containing ambient. Elongated GeOx wires grow from the liquid catalyst tip, consuming the adjoining Ge NWs as they grow. The oxide NWs' diameter is dictated by the catalyst diameter and their alignment generally parallels that of the growth direction of the initial Ge NWs. Growth rate comparisons reveal a substantial oxidation rate enhancement in the presence of the Au catalyst. Statistical analysis of GeOx nanowire growth by ex situ transmission electron microscopy and scanning electron microscopy suggests a transition from an initial, diameter-dependent kinetic regime, to diameter-independent wire growth. This behavior suggests the existence of an incubation time for GeOx NW nucleation at the start of vapor-liquid-solid oxidation.
引用
收藏
页数:6
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