Spin-glass-like behavior caused by Mn-rich Mn(Ga)As nanoclusters in GaAs

被引:3
作者
Chang, C. H. [1 ]
Hong, T. M. [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30043, Taiwan
关键词
carrier density; Curie temperature; exchange interactions (electron); ferromagnetic materials; gallium arsenide; manganese compounds; nanostructured materials; RKKY interaction; semimagnetic semiconductors;
D O I
10.1063/1.3039058
中图分类号
O59 [应用物理学];
学科分类号
摘要
We simulate the indirect exchange interaction between Mn-rich Mn(Ga)As nanoclusters in GaAs by analytical means. In contrast to the conventional Ruderman-Kittel-Kasuya-Yosida (RKKY) formula, which considers the mediation by the carriers in the medium, we also include the contribution from those inside the clusters. Since the carrier concentration is higher in the clusters, this modification allows the RKKY oscillation to change its sign. Consequently, while the previous approach only favors ferromagnetism for this system, an antiferromagnetic coupling is in fact possible. Since the Mn-rich Mn(Ga)As nanoclusters are naturally formed and bound to have different sizes, their spin orientation is likely to be frustrated due to mixed preferences from different neighbors. We argue that this is likely the source of the spin-glass-like behavior that plagues this system. By tuning the size and narrowing its distribution, normal ferromagnetism can be restored with a Curie temperature higher than previously thought.
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页数:3
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