The use of Auger spectroscopy and a quadrupole SIMS build on a focused ion beam to examine focused ion beam made cross-sections

被引：5

作者：

Verkleij, D

Mulders, C

机构：

[1] Philips Semicond Nijmegen, PMO Dept, Nijmegen, Netherlands

[2] Philips Semicond Nijmegen, Q&R CSN, Nijmegen, Netherlands

来源：

MICRON | 1999年 / 30卷 / 03期

关键词：

Auger; focused ion beam; SIMS; failure analysis; integrated circuits;

D O I：

10.1016/S0968-4328(99)00007-4

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The structural analysis and determination of the elemental composition of included particles are of frequent occurrence in failure analysis of integrated circuits. For these analysis, the focused ion beam (FIB) is essential. With its ability to fetus a Ga+ beam from a liquid metal ion source to 10 nm or less, the FIB is able to make cross-sections of very small features. We describe a method to analyse the surface of these FIB made cross-sections. Auger spectroscopy and a quadrupole SIMS build on a FIB are used to determine the elemental composition of included particles as well as the elemental composition of a layered structure. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：227 / 234

页数：8