Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer

被引：7
作者：
Huang, Ping-yang [1 ,2 ]
Xiao, Long-fei [3 ]
Chen, Xiu-fang [3 ]
Wang, Qing-pu [1 ,2 ]
Xu, Ming-sheng [1 ,2 ]
Xu, Xian-gang [3 ]
Huang, Jing [4 ]
机构：
[1] Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
[4] Guizhou Minzu Univ, Sch Mechatron Engn, Guiyang 550025, Guizhou, Peoples R China
来源：
OPTOELECTRONICS LETTERS | 2020年 / 16卷 / 04期
关键词：
LIGHT-EMITTING-DIODES; HOLE INJECTION; UV-LEDS; PERFORMANCE; INACTIVATION; KINETICS; ELECTRON; SYSTEM;
D O I：
10.1007/s11801-020-0072-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The low internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low IQE include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the IQE of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs.
引用
收藏
页码：279 / 283
页数：5
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