Bilateral design of mm-wave LNA and receiver front-end in 90nm CMOS

被引：3
|
作者：
Kwok, KaChun [1 ]
Long, John R. [1 ]
机构：
[1] Delft Univ Technol, Elect Res Lab, DIMES, NL-2600 AA Delft, Netherlands
来源：
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词：
D O I：
10.1109/ISCAS.2008.4541384
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper describes design of a 79GHz receiver front-end with emphasis on simultaneous noise and power matching of mm-wave bilateral LNA in CMOS technologies. The LNA is a pseudo-differential three stage common source amplifier to accommodate the low breakdown voltage of deep submicron devices. Optimization based on maximum available gain, minimum noise figure and matching network losses is presented. An efficient Smith chart based technique is introduced to simplify the design with a finite reverse isolation. A Gilbert-type down-conversion mixer and an IF amplifier complete the receiver. Simulations predict a conversion gain of 27dB and a noise figure of 9.4dB while consuming 54.4mW from a IV supply in 90nm CMOS.
引用
收藏
页码：181 / 184
页数：4
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