Polymer hot-carrier transistor

被引：26
作者：
Chao, YC
Yang, SL
Meng, HF [1 ]
Horng, SF
机构：
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期
关键词：
D O I：
10.1063/1.2149219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.
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页码：1 / 3
页数：3
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