Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

被引：20

作者：

Cheng, C. H. ^{[1
]}

Pan, H. C. ^{[2
]}

Huang, C. C. ^{[3
]}

Chou, C. P. ^{[1
]}

Hsiao, C. N. ^{[2
]}

Hu, J. ^{[4
]}

Hwang, M. ^{[4
]}

Arikado, T. ^{[4
]}

McAlister, S. P. ^{[5
]}

Chin, Albert ^{[3
,6
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 300, Taiwan

[2] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[4] Tokyo Electron Ltd, Tokyo 1078481, Japan

[5] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

[6] Nanoelect Consortium Taiwan, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

high kappa; metal-insulator-metal (MIM); plasma treatment; TiHfO;

D O I：

10.1109/LED.2008.2000945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 x 10(-6) A/cm(2) (at -1 V) at a 28 fF/mu m(2) capacitance density.

引用

页码：1105 / 1107

页数：3

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